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Main Physical, Chemical and Electrochemical Properties of Silicon Carbide

Silicon carbide is a synthetic carbide with a molecular formula of SiC. It is usually formed by silicon dioxide and carbon at a high temperature of 2000°C or higher after electrification. Due to its high hardness, high wear resistance, high corrosion resistance and high-temperature strength, SiC is used in various wear-resistant, corrosion-resistant and high-temperature resistant mechanical parts. Chemical properties Oxidation resistance: When silicon carbide is heated to 1300°C in air, a protective layer of silicon dioxide begins to form on its crystal surface. With the thickening of the protective layer, the internal silicon carbide is prevented from being oxidized, which makes the silicon carbide have better oxidation resistance. However, when the temperature reaches 1900K (1627°C) or higher, the silicon dioxide protective film begins to disappear, and the oxidation of silicon carbide intensifies.   Acid and alkali resistance: due to the silicon dioxide protective film on its surfa