Graphene has been fascinating to scientists since its discovery more than a decade ago. This carbon material with only one atomic thickness has excellent electronic properties, strength and ultra-lightweight. Its use is also expanding, but how to implant the energy gap (bandgap/semiconductor or insulator valence band tip to the energy gap at the bottom of the conduction band) to make transistors and other electronic devices, but always let the researchers do nothing. Graphene Researchers at the Massachusetts Institute of Technology (MIT) have made major breakthroughs in this area and are even expected to change some of the theoretical predictions of graphene physics. They introduced another material with single atomic thickness and properties similar to graphene: hexagonal boron nitride (HBN) . They placed a layer of graphene on the HBN, and the resulting hybrid material had both the conductive properties of graphene and finally the energy gap necessary to build the transistor.